Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions
نویسندگان
چکیده
This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed devices with different switching rates, junction temperatures and threshold voltages (VTH). The results show that VTH is most critical factor affecting reduced robustness under SC. current conducted per device shown to increase connection compared single measurements. shift from bias–temperature–instability (BTI) known occur in MOSFETs, hence this combines BTI tests. a positive VGS stress gate before measurement reduces peak by magnitude proportional time. Repeating measurements at elevated time dependency shift, thereby indicating thermal acceleration negative charge trapping. recovery also observed using Similar Si IGBTs no observable In conclusion, test methodology for investigating characteristics presented along key showing electrothermal dynamics conditions.
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ژورنال
عنوان ژورنال: Energies
سال: 2021
ISSN: ['1996-1073']
DOI: https://doi.org/10.3390/en14206834